Saturday, December 6, 2014

EC6201 ELECTRONIC DEVICES syllabus-subject-notes-pevious-year-questions-papers-bank

EC6201 ELECTRONIC DEVICES syllabus-subject-notes-pevious-year-questions-papers-bank


OBJECTIVES: The student should be made to:
 Be exposed to basic electronic devices
 Be familiar with the theory, construction, and operation of Basic electronic devices.

UNIT I SEMICONDUCTOR DIODE 9 PN junction diode, Current equations, Diffusion and drift current densities, forward and reverse bias characteristics, Switching Characteristics. UNIT II BIPOLAR JUNCTION 9 NPN -PNP -Junctions-Early effect-Current equations – Input and Output characteristics of CE, CB CC-Hybrid -π model - h-parameter model, Ebers Moll Model- Gummel Poon-model, Multi Emitter Transistor.

UNIT III FIELD EFFECT TRANSISTORS 9 JFETs – Drain and Transfer characteristics,-Current equations-Pinch off voltage and its significance- MOSFET- Characteristics- Threshold voltage -Channel length modulation, D-MOSFET, E-MOSFET-,Current equation - Equivalent circuit model and its parameters, FINFET,DUAL GATE MOSFET.

UNIT IV SPECIAL SEMICONDUCTOR DEVICES 9 Metal-Semiconductor Junction- MESFET, Schottky barrier diode-Zener diode-Varactor diode –Tunnel diode- Gallium Arsenide device, LASER diode, LDR.

UNIT V POWER DEVICES AND DISPLAY DEVICES
UJT, SCR, Diac, Triac, Power BJT- Power MOSFET- DMOS-VMOS. LED, LCD, Photo transistor, Opto Coupler, Solar cell, CCD.


OUTCOMES: At the end of the course, the student should be able to:
 Explain the theory, construction, and operation of basic electronic devices.
 Use the basic electronic devices
TEXT BOOKS
1. Donald A Neaman, “Semiconductor Physics and Devices”, Third Edition, Tata Mc GrawHill Inc. 2007.

REFERENCES:
1. Yang, “Fundamentals of Semiconductor devices”, McGraw Hill International Edition, 1978.
2. Robert Boylestad and Louis Nashelsky, “Electron Devices and Circuit Theory” Pearson Prentice Hall, 10th edition,July 2008.

No comments:

Post a Comment